High-speed gate drive circuit for SiC MOSFET by GaN HEMT
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2015
ISSN: 1349-2543
DOI: 10.1587/elex.12.20150285